GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE

摘要

A light emitting diode comprises: an n-type Group III nitride layer (12); a Group III nitride based superlattice (16) on the n-type Group III nitride layer, the superlattice having at least two periods of alternating layers; a Group III nitride based light emitting diode active region (18) on the superlattice opposite the n-type Group III nitride layer, wherein the light emitting diode active region provides photon emission due to carrier recombination therein; and a Group III nitride capping layer (22) including aluminum (Al) on the light emitting diode active region, the Group III nitride capping layer having a higher Al composition in a region distal from the light emitting diode active region than is present in a region proximate the light emitting diode active region.