| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which reduces variations of the I-L characteristics the semiconductor light-emitting element, offers high brightness and high output, and is superior in yield and reliability. <P>SOLUTION: The square surface average roughness of a first conductive semiconductor substrate serving as a growth substrate for the semiconductor light-emitting element is determined to be 0.8 nanometer or less. <P>COPYRIGHT: (C)2010,JPO&INPIT |
