发明名称
摘要 The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
申请公布号 JP5175932(B2) 申请公布日期 2013.04.03
申请号 JP20100518050 申请日期 2009.06.25
申请人 发明人
分类号 G03F1/32;G03F1/50;G03F1/54;G03F1/58 主分类号 G03F1/32
代理机构 代理人
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