METAL GATE DEVICE WITH LOW TEMPERATURE OXYGEN SCAVENGING

摘要

PURPOSE: A metal gate device with a low temperature oxygen scavenging part is provided to optimize the performance of an NMOSFET and a PMOSFET by independently controlling work functions in an NFET region and a PFET region. CONSTITUTION: A semiconductor substrate is provided(102). A dummy gate structure is removed by applying an etching process(104). An interfacial layer and an HK dielectric layer are deposited on the semiconductor substrate(106). An oxygen scavenging metal layer is deposited on the HK dielectric layer by using a low temperature oxygen scavenging method(108). A metal gate stack is formed on the oxygen scavenging metal layer(110). [Reference numerals] (102) Providing a semiconductor; (104) Removing a dummy gate structure; (106) Depositing an IL and an HK layer; (108) Depositing scavenging metal; (110) Forming a metal gate stack;