METAL GATE STACK HAVING TIALN BLOCKING/WETTING LAYER

摘要

PURPOSE: A metal gate stack including a TiAlN blocking and wetting layer is provided to reduce a leakage current and to improve the performance of a device in comparison to a gate stack including a TaN blocking layer and a Ti wetting layer. CONSTITUTION: A gate structure is formed on the upper side of a substrate(110). The gate structure has a gate stack including a high-K dielectric layer arranged on the upper side of the substrate and a dummy gate arranged on the upper side of the high-k dielectric layer. An opening part is formed by removing the dummy gate from the gate structure(120). A work function layer, a multifunctional wetting and blocking layer, and a conductive layer are formed to fill the opening part(130). An integrated circuit device is completely manufactured(140). [Reference numerals] (110) Gate structure is formed on the upper side of a substrate. The gate structure has a gate stack including a high-K dielectric layer and a dummy gate arranged on the upper side of the high-k dielectric layer.; (120) Opening part is formed by removing the dummy gate from the gate structure; (130) Work function layer, a multifunctional wetting and blocking layer, and a conductive layer are formed in order to fill the opening part; (140) Completely manufactured;