| 摘要 |
<p>A pixel structure comprises an epitaxial layer (1) of a first conductivity type. A photo-sensitive element comprises a first region (4) of a second conductivity type and a second region (3) of the first conductivity type positioned between the epitaxial layer (1) and the first region (4). A charge storage node (ø2) is arranged to store charges acquired by the photo-sensitive element, or to form part of a charge storage element. A third region (2) of the second conductivity type is positioned between the charge storage node and the epitaxial layer. The pixel structure further comprises a charge-to-voltage conversion element (13) for converting charges from the charge storage node to a voltage signal and an output circuit (21, 22) for selectively outputting the voltage signal from the pixel structure.</p> |
