发明名称 |
Light emitting diode having undoped and unintentionally doped nitride transition layer |
摘要 |
A method of forming electronic device precursors and devices with reduced cracking in relevant layers is disclosed along with resulting structures. The method includes the steps of growing a transition layer of undoped Group III nitride on a substrate that is other than a Group III nitride, growing an active structure of Group III nitride on the undoped layer, and removing the substrate from the undoped layer. |
申请公布号 |
US8409972(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20070734218 |
申请日期 |
2007.04.11 |
申请人 |
BERGMANN MICHAEL J.;DRISCOLL DANIEL C.;EMERSON DAVID T.;CREE, INC. |
发明人 |
BERGMANN MICHAEL J.;DRISCOLL DANIEL C.;EMERSON DAVID T. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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