| 摘要 |
PURPOSE: A resist composition and a method for forming resist patterns using the same are provided to be able to form negative resist patterns in the high resolution and high sensitivity, and further an excellent shape with an alkaline development process. CONSTITUTION: A resist composition includes a substrate component in which the solubility to the alkaline development solution increases with the action of the acid, and a photo base generator component generating base by light exposure. The photo base generator component contains the compound represented by Chemical formula 1. In Chemical formula 1, R1 and R2 are the hydrogen atom, an alkyl group possibly having a substituent, or a phenyl group possibly having a substituent respectively, and at least one is the alkyl group or the phenyl group. R1 and R2 are able to form a ring with the nitrogen atom in the Chemical formula. A method for forming resist patterns comprises the following steps: a step of forming a resist film by coating the resist composition on a supporter; a step of exposing the resist film; a step of neutralizing the base generated from the photo base generator component by light exposure, and the acid supplied to the resist film in the light exposed part of the resist film, and increasing the solubility of the substrate component to the alkaline developing solution with the acid action supplied to the resist film in the light un-exposure part of the resist film through baking; and a step of forming negative resist patterns in which the light un-exposed part of the resist film is dissolved and removed by developing the resist film with alkaline. |
