发明名称 |
Method for manufacturing SOI substrate |
摘要 |
A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A. |
申请公布号 |
US8409966(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US201113177584 |
申请日期 |
2011.07.07 |
申请人 |
OHNUMA HIDETO;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHNUMA HIDETO;YAMAZAKI SHUNPEI |
分类号 |
H01L21/22;H01L21/38 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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