发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device is provided. The method includes forming a gate electrode on a semiconductor substrate; forming a dopant implantation area in the semiconductor substrate by implanting a dopant in the semiconductor substrate, using the gate electrode as a mask; forming sidewalls on the gate electrode; forming a first recess by etching the semiconductor substrate, using the gate electrode and the sidewalls as a mask; forming a second recess by removing the dopant implantation area positioned below the sidewalls; and forming a source area and a drain area by causing a semiconductor material to grow in the first recess and the second recess. |
申请公布号 |
US8409958(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US201113190696 |
申请日期 |
2011.07.26 |
申请人 |
OOKOSHI KATSUAKI;NISHIKAWA MASATOSHI;SHIMAMUNE YOSUKE;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
OOKOSHI KATSUAKI;NISHIKAWA MASATOSHI;SHIMAMUNE YOSUKE |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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