发明名称 Semiconductor device and manufacturing method thereof
摘要 A structure capable of changing the characteristic value of an element after the formation of the element in order to prevent the increase of the manufacturing cost and delay in the delivery of a product. A plurality of diodes is connected in series. Then, a part of the plurality of diodes is short-circuited by a wiring. In specific, a diode and a wiring are connected in parallel, whereby a current flows preferentially into the wiring, so that the diode can be regarded as nonexistent. Then, the wiring is cut at a part of the wiring, thereby having the diode which is connected to the wiring in parallel before the cutting functioning.
申请公布号 US8409890(B2) 申请公布日期 2013.04.02
申请号 US20090577367 申请日期 2009.10.12
申请人 TADOKORO ASAMI;FUJITA MASASHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TADOKORO ASAMI;FUJITA MASASHI
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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