发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.
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申请公布号 |
US8409931(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US201213404521 |
申请日期 |
2012.02.24 |
申请人 |
SAKAI TAIJI;IMAIZUMI NOBUHIRO;MIZUKOSHI MASATAKA;FUJITSU LIMITED |
发明人 |
SAKAI TAIJI;IMAIZUMI NOBUHIRO;MIZUKOSHI MASATAKA |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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