发明名称 Semiconductor device manufacturing method
摘要 A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.
申请公布号 US8409930(B2) 申请公布日期 2013.04.02
申请号 US201113071741 申请日期 2011.03.25
申请人 TERUI MAKOTO;SHIRAISHI YASUSHI;OKI SEMICONDUCTOR CO., LTD. 发明人 TERUI MAKOTO;SHIRAISHI YASUSHI
分类号 H01L21/58 主分类号 H01L21/58
代理机构 代理人
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