发明名称 |
CMOSFET device with controlled threshold voltage and method of fabricating the same |
摘要 |
There is provided a CMOSFET device with a threshold voltage controlled by means of its gate stack configuration and a method of fabricating the same. The CMOSFET device comprises: a semiconductor substrate; am interface layer grown on the silicon substrate; a first high-k gate dielectric layer deposited on the interface layer; a very thin metal layer deposited on the first high-k gate dielectric layer; a second high-k gate dielectric layer deposited on the very thin metal layer; and a gate electrode layer deposited on the second high-k gate dielectric layer. |
申请公布号 |
US8410555(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20100937444 |
申请日期 |
2010.06.24 |
申请人 |
WANG WENWU;ZHU HUILONG;CHEN SHIJIE;CHEN DAPENG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
WANG WENWU;ZHU HUILONG;CHEN SHIJIE;CHEN DAPENG |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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