| 摘要 |
A polished semiconductor wafer of high flatness is produced by the following ordered steps: slicing a semiconductor wafer from a rod composed of semiconductor material, material-removal processing of at least one side of the semiconductor wafer, and polishing of at least one side of the semiconductor wafer, wherein the semiconductor wafer has, after the material-removing processing and before the polishing on at least one side to be polished, along its margin, a ring-shaped local elevation having a maximum height of at least 0.1 μm, wherein the local elevation reaches its maximum height within a 10 mm wide ring lying at the edge of the semiconductor wafer. |
