发明名称 |
Semiconductor device and DC-DC converter |
摘要 |
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion. |
申请公布号 |
US8410546(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20090408056 |
申请日期 |
2009.03.20 |
申请人 |
KAWAGUCHI YUSUKE;AKIYAMA MIWAKO;YAMAGUCHI YOSHIHIRO;SATO NOBUYUKI;HAYASE SHIGEAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAWAGUCHI YUSUKE;AKIYAMA MIWAKO;YAMAGUCHI YOSHIHIRO;SATO NOBUYUKI;HAYASE SHIGEAKI |
分类号 |
H01L29/76;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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