发明名称 Semiconductor device and DC-DC converter
摘要 A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
申请公布号 US8410546(B2) 申请公布日期 2013.04.02
申请号 US20090408056 申请日期 2009.03.20
申请人 KAWAGUCHI YUSUKE;AKIYAMA MIWAKO;YAMAGUCHI YOSHIHIRO;SATO NOBUYUKI;HAYASE SHIGEAKI;KABUSHIKI KAISHA TOSHIBA 发明人 KAWAGUCHI YUSUKE;AKIYAMA MIWAKO;YAMAGUCHI YOSHIHIRO;SATO NOBUYUKI;HAYASE SHIGEAKI
分类号 H01L29/76;H01L29/94 主分类号 H01L29/76
代理机构 代理人
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