发明名称 |
Methods of forming integrated circuit devices using self-aligned contact formation techniques |
摘要 |
Methods of forming integrated circuit devices include forming first and second gate electrodes at side-by-side locations on a substrate and forming first and second sidewall spacers on sidewalls of the first gate electrode and the second gate electrode, respectively. The first and second gate electrodes are covered with a first electrically insulating layer of a first material. A second electrically insulating layer of a second material is deposited on the first electrically insulating layer. The second electrically insulating layer is patterned to define a first opening therein that exposes an underlying first portion of the first electrically insulating layer.
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申请公布号 |
US8409956(B1) |
申请公布日期 |
2013.04.02 |
申请号 |
US201113283183 |
申请日期 |
2011.10.27 |
申请人 |
KANG HONG SEONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG HONG SEONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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