METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device and the semiconductor device are provided to reduce the length of a channel by using an oxide semiconductor and to secure the miniaturization of a transistor. CONSTITUTION: A gate electrode layer(401) is formed on a semiconductor layer(403). An insulating layer(407) includes a first aperture and a second aperture. A source electrode layer(405a) and a drain electrode layer(405b) are filled in the first aperture and the second aperture, respectively. The source electrode layer and the drain electrode layer are electrically connected to the semiconductor layer. A source line layer(465a) and a drain line layer(465b) touch the source electrode layer and the drain electrode layer, respectively.