发明名称 Pattern forming method and method for manufacturing semiconductor device
摘要 Double exposure is performed by using a pair of photomasks, an attenuated phase shift mask or the like which is not an alternating phase shift mask, and a pattern is transferred onto a photoresist. Here, on the occasion of performing exposure with the photomask for forming a finer pattern, double pole illumination is used as an illumination system.
申请公布号 US8409786(B2) 申请公布日期 2013.04.02
申请号 US20070848786 申请日期 2007.08.31
申请人 YAMAMOTO TOMOHIKO;ASAI SATORU;FUJITSU SEMICONDUCTOR LIMITED 发明人 YAMAMOTO TOMOHIKO;ASAI SATORU
分类号 G03F7/20 主分类号 G03F7/20
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