发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device constituting an inverting amplifier employs a cascode current source as a current source. In the semiconductor integrated circuit device, a high-potential-side transistor of the cascode current source and a low-potential-side transistor constituting an amplification portion are shared. The configuration can not only make an output impedance of the cascode current source high and improve current source characteristics but also make a minimum potential at a minimum potential point of the amplification portion low and ensure a sufficient power supply voltage margin. |
申请公布号 |
US8410854(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US201213354757 |
申请日期 |
2012.01.20 |
申请人 |
DEGUCHI JUN;KOBAYASHI NAOKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
DEGUCHI JUN;KOBAYASHI NAOKI |
分类号 |
H03F3/04 |
主分类号 |
H03F3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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