发明名称 SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME
摘要 <p>PURPOSE: A semiconductor package and a method for forming the same are provided to secure high density integration by covering a protruding through via with a wetting layer. CONSTITUTION: A through via(19a) passes through a substrate(1). A wetting layer(13a) is formed between the through via and the substrate. A seed layer(17a) is formed between the wetting layer and the through via. The through via protrudes on the surface of the substrate. The width of the through via is the same as or larger than the height of the protruding through via.</p>
申请公布号 KR20130032724(A) 申请公布日期 2013.04.02
申请号 KR20110096486 申请日期 2011.09.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JU IL;JIN, JEONG GI;PARK, JEONG WOO;KIM, HYUNG SEOK
分类号 H01L23/48;H01L21/60 主分类号 H01L23/48
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