发明名称 A BEAM MONITORING DEVICE, METHOD AND SYSTEM
摘要 PURPOSE: A beam monitoring device, a monitoring method, and a monitoring system are provided to control an implant process by correcting an ion beam generating unit. CONSTITUTION: A one-dimension profiler(110) comprises insulating materials and a faraday(116) having conductive materials. A two-dimension profiler(112) comprises multiple faradays(120) having insulating materials and conductive materials. A control arm(114) operates in order to facilitate the movement of a beam monitoring device in a longitudinal direction. The control arm facilitates the rotation around an axis of the beam monitoring device.
申请公布号 KR20130032809(A) 申请公布日期 2013.04.02
申请号 KR20120001541 申请日期 2012.01.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HWANG CHIH HONG;CHANG CHUN LIN;CHENG NAI HAN;YANG CHI MING;LIN CHIN HSIANG
分类号 H01J37/317 主分类号 H01J37/317
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