发明名称 |
A BEAM MONITORING DEVICE, METHOD AND SYSTEM |
摘要 |
PURPOSE: A beam monitoring device, a monitoring method, and a monitoring system are provided to control an implant process by correcting an ion beam generating unit. CONSTITUTION: A one-dimension profiler(110) comprises insulating materials and a faraday(116) having conductive materials. A two-dimension profiler(112) comprises multiple faradays(120) having insulating materials and conductive materials. A control arm(114) operates in order to facilitate the movement of a beam monitoring device in a longitudinal direction. The control arm facilitates the rotation around an axis of the beam monitoring device.
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申请公布号 |
KR20130032809(A) |
申请公布日期 |
2013.04.02 |
申请号 |
KR20120001541 |
申请日期 |
2012.01.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HWANG CHIH HONG;CHANG CHUN LIN;CHENG NAI HAN;YANG CHI MING;LIN CHIN HSIANG |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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