发明名称 |
Methods of patterning platinum-containing material |
摘要 |
Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide.
|
申请公布号 |
US8409960(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US201113083354 |
申请日期 |
2011.04.08 |
申请人 |
ZAGREBELNY ANDREY V.;CARTER CHET E.;MICRON TECHNOLOGY, INC. |
发明人 |
ZAGREBELNY ANDREY V.;CARTER CHET E. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|