| 摘要 |
A pixel structure including a scan line, a data line intersecting the scan line, a first gate, a second gate, a third gate, a semiconductor layer, a source, a first drain, a second drain, a first pixel electrode, and a second pixel electrode is provided. The dataline and the scan line are interlaced disposed. The semiconductor layer is disposed on the scan line to define the first gate and the second gate. The source is directly connected to the data line and located between the first gate and the second gate. The first gate is located between the first drain and the source. The second gate is located between the second drain and the source. The third gate is electrically connected to the scan line. The first pixel electrode and the second pixel electrode are respectively electrically connected to the first drain and the second drain. |
