p-Type MgZnO-based thin film and semiconductor light emitting device

摘要

A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0≦̸X<1, preferably 0≦̸X≦̸0.5. In the p-type MgZnO thin film (1), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0×1018 cm−3 or more. The p-type MgZnO thin film (1) is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0×1017 cm−3 or less. The p-type MgZnO thin film (1) is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0×1016 cm−3 or less.