摘要 |
PURPOSE: A memory and a memory programming method thereof are provided to reduce programming time in the memory by performing two kinds of slight operations. CONSTITUTION: A common program pulse is applied to program cells in each page of a section including two or more pages(S610). One or more different program pulses are applied to the program cells according to a target threshold voltage of the program cell in each page of the section. The program cells are programmed to have their own target threshold voltages in each page of the section(S620). [Reference numerals] (AA) Start; (BB) End; (S610) Applying a program pulse to program cells; (S620) Threshold voltages of all cells reach a target threshold voltage?; |