| 摘要 |
A plasma etching chamber is provided to replace an upper electrode without disassembling a stem by installing the upper electrode by a fixing bolt inserted into the lower part of the stem. The edge of a wafer is etched by plasma in a plasma etching chamber. An insulation panel(14) controls formation of plasma, positioned in the center of the wafer. A panel ring(22) is detachably installed on the edge of the insulation panel. The surface of the panel ring can be coated with yttrium. A coating panel(20) coated with yttrium can be installed under the insulation panel. |
