| 摘要 |
The edges of semiconductor wafers are examined by an imaging method and the positions and forms of defects on the edge are determined, and in addition, a ring-shaped region on the flat area of the semiconductor wafer, the outer margin of which is≰10 mm from the edge, is examined by means of photoelastic stress measurement and the positions of stressed regions in the ring-shaped region are determined, wherein the positions of the defects and the positions of the stressed regions are compared with one another, and the defects are classified in classes on the basis of their form and the results of the photoelastic stress measurement. |
