发明名称 |
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS INDUCED BY HIGH-K CAPPING METAL LAYERS |
摘要 |
<p>PURPOSE: A semiconductor device with a strained channel induced by a high-K capping metal layer is provided to improve the performance of a device by using a metal gate transistor. CONSTITUTION: A semiconductor substrate is provided(102). A HK(High-K) dielectric layer is deposited on the semiconductor substrate(104). A tensile stress HK capping layer is deposited on the HK dielectric layer(106). The tensile stress HK capping layer is removed from an NMOS region(108). A compressive stress capping layer is deposited on the NMOS region(110). [Reference numerals] (102) Providing a substrate; (104) Depositing an HK layer; (106) Depositing a tensile stress HK capping layer; (108) Removing the tensile stress HK capping layer from an NMOS; (110) Depositing a compressive stress capping layer on the NMOS; (112) Charging metal;</p> |
申请公布号 |
KR20130032230(A) |
申请公布日期 |
2013.04.01 |
申请号 |
KR20120010395 |
申请日期 |
2012.02.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
XU JEFF J. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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