发明名称 ELEMENT DE MEMOIRE MAGNETIQUE
摘要 The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the current flow direction, and wherein the magnetization direction and the magnetic field direction are mutually perpendicular.
申请公布号 FR2963152(B1) 申请公布日期 2013.03.29
申请号 FR20100003123 申请日期 2010.07.26
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;UNIVERSITE JOSEPH FOURIER;INSTITUT CATALA DE NANOTECNOLOGIA (ICN);INSTITUCIO CATALANA DE RECERCA I ESTUDIS AVANCATS(ICREA) 发明人 GAUDIN GILLES;MIRON IOAN MIHAI;GAMBARDELLA PIETRO;SCHUHL ALAIN
分类号 G11C11/15;G11C11/16 主分类号 G11C11/15
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