发明名称 INFRARED SENSOR
摘要 Provided is an infrared sensor capable of suppressing variation in an S/N ratio in a plane of an infrared sensor chip resulting from heating of an IC chip. The infrared sensor includes: an infrared sensor chip (100) in which a plurality of pixel portions (2) each including a temperature-sensitive portion (30) formed of a thermopile (30a) is disposed in an array on one surface side of a semiconductor substrate (1); and an IC chip (102) that processes an output signal of the infrared sensor chip (100). A package (103) includes a package main body (104) on which the infrared sensor chip (100) and the IC chip (102) are mounted to be arranged side-by-side, and a package cover (105) that has a lens (153) transmitting infrared rays and is hermetically bonded to the package main body (104). The package (103) is provided therein with a cover member (106) that includes a window hole (108) through which infrared rays pass into the infrared sensor chip (100) and equalizes amounts of temperature change of hot junctions T1 and cold junctions T2 among the pixel portions (2), the temperature change resulting from heating of the IC chip (102).
申请公布号 KR20130031342(A) 申请公布日期 2013.03.28
申请号 KR20137001304 申请日期 2011.06.23
申请人 PANASONIC CORPORATION 发明人 KIRIHARA MASAO;YAMANAKA HIROSHI;SANAGAWA YOSHIHARU;AKETA TAKANORI;NAKAMURA YUSHI;UEDA MITSUHIKO
分类号 G01J5/20;G01J5/12;G01J5/16;H01L23/34 主分类号 G01J5/20
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