| 摘要 |
PURPOSE: An insulated gate bipolar transistor is provided to maximally reduce a saturation voltage by setting a channel length as 1μm to 2μm. CONSTITUTION: A first conductivity type drift layer(101) has a second side. Second conductive well regions are formed to be separated from each other on a first side. A first conductivity type emitter region(120) is formed on the second conductive well region. A gate electrode(140) is formed on the first conductivity type drift layer. A second conductive type collector region is formed on the second side of the first conductivity type drift layer. |
