发明名称 |
BAND STRUCTURE ENGINEERING FOR IMPROVED EFFICIENCY OF CDTE BASED PHOTOVOLTAICS |
摘要 |
Disclosed is a solar cell or component thereof that includes a p-type thin film solar light absorbing layer having one or more compositions of group II-VI alloys described as CdTexM1-x, where M is S, Se or O. An n-type thin-film transparent window layer comprising CdS is provided adjacent to the CdTexMi-x p-type thin film solar light absorbing layer such that a p-n junction formed between the layers.
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申请公布号 |
US2013074912(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213625592 |
申请日期 |
2012.09.24 |
申请人 |
ROSESTREET LABS, LLC;ROSESTREET LABS, LLC |
发明人 |
WALUKIEWICZ WLADYSLAW;REICHERTZ LOTHAR A. |
分类号 |
H01L31/0296;H01L31/073;H01L31/18 |
主分类号 |
H01L31/0296 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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