| 摘要 |
In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer. |
