| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which inhibits diffusion of carbon derived from a silicon carbide substrate in an ohmic electrode and precipitation of carbon on a surface when forming a silicide layer to be the ohmic electrode so as to contact the silicon carbide substrate, and which can form an electrode layer on the ohmic electrode with high adhesion. <P>SOLUTION: A semiconductor element manufacturing method of a present embodiment for forming an ohmic electrode 4 comprises: a first process of forming a silicon layer in an ohmic electrode formation region 2a of a silicon carbide substrate 2; a second process of forming a metal layer 8 on the silicon layer 5; a third process of reacting Si contained in the silicon layer 5 with a constituent element of the metal layer 8 by performing a heat treatment to form a silicide layer 41 contacting the silicon carbide substrate 2; and a fourth process of removing the remaining metal layer 8 that is not subject to reaction with Si to expose the silicide layer 41. <P>COPYRIGHT: (C)2013,JPO&INPIT |
