| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CPP structured magnetic resistance effect head capable of reducing influence of etching damage in a magnetic resistance effect sensor film junction end part in an element height direction, suppressing deterioration of dielectric voltage between an upper shield layer and a lower shield layer or fluctuation of a reproduction characteristic caused by shielding, and keeping reduced electrostatic capacitance. <P>SOLUTION: A magnetic resistance effect head is configured so that: length in an element height direction in a lower surface of a pinning layer 13 is longer than length in the element height direction in a lower surface of a first ferromagnetic layer 14; an angle, which is made by an end part in the element height direction of the pinning layer 13 with a surface obtained by extending a lower surface of a magnetic resistance effect sensor film, is smaller than an angle, which is made by an end part in the element height direction of a second ferromagnetic layer 16 with a surface obtained by extending the lower surface of the magnetic resistance effect sensor film; and height of an upper surface of a refill film 18 in the element height direction is equal to or higher than height of an upper surface of the magnetic resistance effect sensor film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
