TECHNIQUE FOR SMOOTHING AN INTERFACE BETWEEN LAYERS OF A SEMICONDUCTOR DEVICE

摘要

The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in a non-magnetic material; a barrier layer disposed on the composite layer; a free layer disposed over the barrier layer; and a second electrode disposed over the free layer.