发明名称 |
Manufacturing methods for accurately aligned and self-balanced superjunction devices |
摘要 |
A method for manufacturing a semiconductor power device on a semiconductor substrate supporting a drift region composed of an epitaxial layer by growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers then carrying out a device manufacturing process on a top side of the epitaxial layer with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers. |
申请公布号 |
US2013075855(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201113200683 |
申请日期 |
2011.09.27 |
申请人 |
GUAN LINGPENG;BOBDE MADHUR;BHALLA ANUP;LEE YEEHENG;CHEN JOHN;HO MOSES |
发明人 |
GUAN LINGPENG;BOBDE MADHUR;BHALLA ANUP;LEE YEEHENG;CHEN JOHN;HO MOSES |
分类号 |
H01L29/06;H01L21/22 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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