| 发明名称 |
Ga2O3-based semiconductor element |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based semiconductor element. <P>SOLUTION: A Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>-based FET 10 includes: a p-type α-(Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>)<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal film 3 that is formed on an α-Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>substrate 2 and is composed of an α-(Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>)<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal (0≤x<1); a source electrode 12 and a drain electrode 13 that are formed on the p-type α-(Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>)<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal film 3; contact regions 14 and 15 that are formed in the p-type α-(Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>)<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal film 3 and are connected to the source electrode 12 and the drain electrode 13, respectively; and a gate electrode 11 that is formed on a surface of the α-Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>substrate 2 opposite to the p-type α-(Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>)<SB POS="POST">2</SB>O<SB POS="POST">3</SB>single crystal film 3 between the contact region 14 and the contact region 15. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013058637(A) |
申请公布日期 |
2013.03.28 |
| 申请号 |
JP20110196438 |
申请日期 |
2011.09.08 |
| 申请人 |
TAMURA SEISAKUSHO CO LTD;NATIONAL INSTITUTE OF INFORMATION & COMMUNICATIONTECHNOLOGY;KYOTO UNIV |
发明人 |
SASAKI KOHEI;TOWAKI MASATAKA;FUJITA SHIZUO |
| 分类号 |
H01L29/786;H01L21/336;H01L21/363 |
主分类号 |
H01L29/786 |
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