发明名称 |
Semiconductor Memory Device and Manufacturing Method Thereof |
摘要 |
A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.
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申请公布号 |
US2013075688(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213675975 |
申请日期 |
2012.11.13 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP;SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP;SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION |
发明人 |
XU JIA;WU GUANPING;ZHANG CHAO;LIU DAISY |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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