| 摘要 |
<p>A chemical vapor deposition reactor 10 and a method of wafer processing are provided. The reactor 10 includes a reaction chamber 12 having an interior 26, a gas inlet manifold 14 communicating with the interior of the chamber, an exhaust system 70 including an exhaust manifold 72 having a passage 78 and one or more ports 76, and one or more cleaning elements 80 mounted within the chamber. The gas inlet manifold 14 can admit process gasses to form a deposit on substrates 58 held within the interior 26. The passage 78 can communicate with the interior 26 of the chamber 12 through the one or more ports 76. The one or more cleaning elements 80 are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports 76.</p> |
