| 摘要 |
The invention provides a pattern-formation process comprising a step of providing a substrate material having on a major surface a difficult-to-access recess formed by the presence of a 1st mask, a step of using a physical evaporation method to deposit a 2nd mask-formation material, which is higher than the 1st mask in terms of etching resistance, from a side having the 1st mask formed on it all over the upper surface of the 1st mask and peripherally on a side of the difficult-to-access recess to form the 2nd mask comprising a series of films, and a step of etching the substrate material via the 1st mask and the 2nd mask, wherein the 2nd mask-formation step comprises operation of flying the 2nd mask-formation material by the physical evaporation method vertically to the major surface of the substrate material, and the difficult-to-access recess is sized such that when the 2nd mask-formation material is flown and deposited by the physical evaporation method vertically to the major surface of the substrate material, the 2nd mask-formation material cannot substantially reach down to the bottom of the recess. With the inventive process, portions of the difficult-to-access recesses formed by the presence of the etching masks in a site to be etched can be processed by etching even when those recesses are 25 nm or less, and especially 20 nm or less in size.
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