发明名称 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 A method for producing a semiconductor device for improving production efficiency and the flexibility of production design thereof is provided. The method includes preparing semiconductor chips having a first main surface on which an electroconductive member is formed, preparing a supporting structure in which over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order, arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to the first main surfaces of the semiconductor chips, laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips, and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer and the first thermosetting resin layer from each other.
申请公布号 US2013078769(A1) 申请公布日期 2013.03.28
申请号 US201213631268 申请日期 2012.09.28
申请人 NITTO DENKO CORPORATION;NITTO DENKO CORPORATION 发明人 ODA TAKASHI;MORITA KOSUKE;TOYODA EIJI
分类号 H01L21/56 主分类号 H01L21/56
代理机构 代理人
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