发明名称 CRACK DETERMINING DEVICE AND SEMICONDUCTOR DEVICE
摘要 There are provided a crack determining device capable of determining, in real time and with precision, the fact that a crack has occurred in a solder layer, and a semiconductor device comprising same. A crack determining device of the present invention is a crack determining device that determines whether or not a crack has occurred in a solder layer with respect to a semiconductor device in which at least a semiconductor element is connected to a connectee member via the solder layer, the crack determining device comprising a generation part that generates a magnetic field and that is fixed to a member forming the semiconductor device, and a detection part that detects a magnitude of a magnetic field and that is disposed within the solder layer, wherein the magnetic field generated at the generation part is detected at the detection part, and it is determined that a crack has occurred in the solder layer if this magnitude of the magnetic field varies from a magnitude of the magnetic field detected before the crack occurred.
申请公布号 US2013076347(A1) 申请公布日期 2013.03.28
申请号 US201013376204 申请日期 2010.06.09
申请人 TOSHIDA HISAMITSU 发明人 TOSHIDA HISAMITSU
分类号 G01N27/82 主分类号 G01N27/82
代理机构 代理人
主权项
地址