发明名称 |
STRAIN-CONTROLLED ATOMIC LAYER EPITAXY, QUANTUM WELLS AND SUPERLATTICES PREPARED THEREBY AND USES THEREOF |
摘要 |
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon. |
申请公布号 |
US2013075694(A1) |
申请公布日期 |
2013.03.28 |
申请号 |
US201213656852 |
申请日期 |
2012.10.22 |
申请人 |
TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD;TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD. |
发明人 |
ALBO ASAF;BAHIR GAD;FEKETE DAN |
分类号 |
H01L31/0352;H01L33/04 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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