| 摘要 |
<p>The purpose of the present invention is to provide: a sintered oxide for use in the production of an oxide semiconductor film, which does not contain gallium (Ga), which is an expensive element, or zinc (Zn), which is an element that causes problems with respect to the stability of the film; and an oxide semiconductor thin film having the same chemical composition as that of the sintered oxide. The sintered oxide is composed of a trivalent indium ion (In3+), a bivalent metal ion (X2+) (wherein X represents at least one element selected from Mg, Ca, Co and Mn), a trivalent metal ion (Y3+) (wherein Y represents at least one element selected from B, Y and Cr) or a tetravalent metal ion (Z4+) (wherein Z represents at least one element selected from Si, Ge, Ti and Zr), and an oxygen ion (O2-), wherein the ratio of the number of atoms among the trivalent indium ion (In3+), the bivalent metal ion (X2+), the trivalent metal ion (Y3+) and the tetravalent metal ion (Z4+) fulfils the following formulae: 0.2 = [In3+]/{[In3+]+[X2+]+[Y3+]+[Z4+]} = 0.8, 0.1 = [X2+]/{[In3+]+[X2+]+[Y3+]+[Z4+]} = 0.5, and 0.1 = {[Y3+]+[Z4+]}/{[In3+]+[X2+]+[Y3+]+[Z4+]} = 0.5.</p> |
