发明名称 HIGH-FREQUENCY AMPLIFIER
摘要 According to one embodiment, a high-frequency amplifier is provided with a field effect transistor for performing amplification, and a stabilizing circuit. The field effect transistor has a source which is configured to be grounded. The stabilizing circuit is connected to a gate of the field effect transistor. The stabilizing circuit has impedance which changes so as to increase as the voltage of a drain of the field effect transistor increases.
申请公布号 US2013076441(A1) 申请公布日期 2013.03.28
申请号 US201213540972 申请日期 2012.07.03
申请人 SENJIYUU TOMOHIRO;KABUSHIKI KAISHA TOSHIBA 发明人 SENJIYUU TOMOHIRO
分类号 H03F3/19 主分类号 H03F3/19
代理机构 代理人
主权项
地址