| 摘要 |
Provided is a probe apparatus, which is capable of measuring, at the wafer level, both the static characteristics and the dynamic characteristics of power devices, said probe apparatus being especially capable of reliably measuring, at the wafer level, the dynamic characteristics of the power devices without being affected by a measuring line used for the static characteristic measurement. A probe apparatus (10) of the present invention is provided with: a movable placing table (12) having a wafer (W) placed thereon, said wafer having a plurality of power devices formed thereon; a probe card (14), which is disposed above the placing table (12), and has a plurality of probes (14A); a conductor film electrode (13), which is formed on the placing surface and an outer circumferential surface of the placing table (12); and a measuring line (16), which electrically connects the conductor film electrode (13) and a tester (17) with each other. The probe apparatus measures, at the wafer level, the electrical characteristics of the power devices on the placing table (12). The second measuring line (16) is provided with a switch mechanism (18) that opens/closes, between the conductor film electrode (13) and the tester (17), an electric path of the measuring line (16). |
