发明名称 SEMICONDUCTOR MEMORY DEVICE FOR PSEUDO-RANDOM NUMBER GENERATION
摘要 According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a random number generation circuit configured to generate a random number, and a controller configured to control the memory cell array and the random number generation circuit. The random number generation circuit includes a random number control circuit configured to generate a random number parameter based on data which is read out from the memory cell by a generated control parameter, and a pseudo-random number generation circuit configured to generate the random number by using the random number parameter as a seed value.
申请公布号 WO2012164986(A3) 申请公布日期 2013.03.28
申请号 WO2012JP54497 申请日期 2012.02.17
申请人 KABUSHIKI KAISHA TOSHIBA;NAGAI, YUJI;INOUE, ATSUSHI;TAKEYAMA, YOSHIKAZU 发明人 NAGAI, YUJI;INOUE, ATSUSHI;TAKEYAMA, YOSHIKAZU
分类号 G06F7/58 主分类号 G06F7/58
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