| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a diode with less leakage current. <P>SOLUTION: A semiconductor device of an embodiment comprises: a first semiconductor layer 2 composed of Al<SB POS="POST">X</SB>Ga<SB POS="POST">1-X</SB>N (0<x<1) or In<SB POS="POST">y</SB>Al<SB POS="POST">1-y</SB>N (0≤y≤1); a first electron induced region 1 composed of non-doped, n-type or p-type GaN, an insulation film 5 and an anode electrode 4 on the same surface of the first semiconductor layer; and a cathode electrode on the first electron induced region. The first electron induced region, the insulation film and the anode electrode are joined with the first semiconductor layer, and the insulation film is joined with the first semiconductor layer between the first semiconductor region and the anode electrode. Junction between the anode electrode and the first semiconductor layer is ohmic junction and junction between the cathode electrode and the first electron induced region is ohmic junction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
